The paper compares hard driven GTOs (IGCTs) and high power IGBT modules in a two level PWM inverter. The structure, fundamental operation, and specific characteristics of the considered devices are shown. Simulations enable a loss comparison ofIGCTs and IGBTs in a 1.14MVA inverter at switching frequencies of f{sub}s=250Hz/500Hz. The evaluation of device characteristics is the basis for a derivation of potential applications.
展开▼
机译：本文将硬升力的GTOS（IGCTS）和高功率IGBT模块进行了两级PWM逆变器。显示了所考虑器件的结构，基本操作和特定特性。仿真在F {Sub} S = 250Hz / 500Hz的开关频率下，在1.14MVA逆变器中实现了14MVA逆变器中的损耗比较。对器件特性的评估是潜在应用的推导的基础。
展开▼
