A Phase-Leg IGBT Module Using DBC Substrate Without Ag Finish by Pressureless Sintering of nanosilver Paste

摘要

This paper presents the design and demonstration of a new type of multichip 1200V/50A insulated-gate-bipolar-transistor (IGBT) module. A heating profile was proposed to sinter nanosilver paste for joining bare DBC substrates instead of DBC substrates with silver or gold metallization by an inline solder vacuum-reflowing furnace. The static and dynamic electrical characteristics of the IGBT modules using sintered nanosilver and bare DBC were compared with the commercial one using soldered Sn5Pb92.5Ag2.5. We found that this proposed IGBT module showed identical electrical characteristics as the commercial one. Thermal resistance measurement showed that the thermal resistance of the IGBT modules using sintered silver and bare DBC is 12.7% lower than that of Sn5.0Pb92.5Ag2.5. The proposed sintered nanosilver on bare DBC could be used as an alternative to high-lead solder in power module manufacturing, especially high temperature applications, e.g., for assembling SiC or GaN devices at high temperature.