【24h】

Gunn diodes for 26-40 GHz

机译:Gunn二极管26-40 GHz

获取原文

摘要

The technology of GaAs MBE layers for K-band Gunn diodes is described in the paper along with the method of diode structure preparation. Chips were assembled directly in a microwave generator. The design of measurement circuit and microwave generator, as well as results of experiments are presented.
机译:本文在纸张中描述了用于K波段枪枪二极管的GaAs MBE层的技术以及二极管结构制备方法。芯片直接组装在微波发生器中。提出了测量电路和微波发生器的设计,以及实验结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号