首页> 外文会议>International conference on silicon carbide, III-nitrides and related materials >Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the #beta#Sic(001) c(4x2) Surface
【24h】

Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the #beta#Sic(001) c(4x2) Surface

机译:组合AB Initio总能量密度函数计算和扫描β#SiC(001)C(4x2)表面的扫描隧道显微镜实验

获取原文

摘要

First-principle total energy density functional calculations using a cluster approach demonstrate that the recently STM-imaged c(4x2) reconstruction of the fully Si-terminated #beta#-SiC(001) surface originates from symmetric Si dimers having not only alternating heights but also alternating bond lengths. The Si-terminated #beta#-SiC(001) surface is thus strucutrally totally different from the Si(001) c(4x2) reconstruction. These theoretical predictions bring new insights into the recent alternately up- and down- dimer model (AUDD model) proposed on the ground of STM measurements on #beta#-SiC c(4x2) surface.
机译:使用群集方法的第一原理总能量密度计算证明了完全Si封端的#β-β--SIC(001)表面的最近STM成像的C(4X2)重建源自具有不仅具有交替高度的对称SI二聚体但是还交替键合长度。因此,Si-终止的#β-SiC(001)表面与Si(001)C(4x2)重建粗略不同。这些理论预测将新的洞察到最近的交替上调和下调模型(Audd模型)在#Beta#-Sic C(4x2)表面上的STM测量的地面上提出。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号