首页> 外文会议>International conference on silicon carbide, III-nitrides and related materials;ICSCIII-N'97 >Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the #beta#Sic(001) c(4x2) Surface
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Combined Ab Initio Total Energy Density Functional Calculations and Scanning Tunneling Microscopy Experiments of the #beta#Sic(001) c(4x2) Surface

机译:#beta#Sic(001)c(4x2)表面的组合从头算总能量密度函数计算和扫描隧道显微镜实验

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First-principle total energy density functional calculations using a cluster approach demonstrate that the recently STM-imaged c(4x2) reconstruction of the fully Si-terminated #beta#-SiC(001) surface originates from symmetric Si dimers having not only alternating heights but also alternating bond lengths. The Si-terminated #beta#-SiC(001) surface is thus strucutrally totally different from the Si(001) c(4x2) reconstruction. These theoretical predictions bring new insights into the recent alternately up- and down- dimer model (AUDD model) proposed on the ground of STM measurements on #beta#-SiC c(4x2) surface.
机译:使用聚类方法的第一性原理总能量密度泛函计算表明,最近STM成像的完全Si端接的#beta#-SiC(001)表面的c(4x2)重建源自对称的Si二聚体,该二聚体不仅具有交替的高度,而且具有以及交替的键长。因此,硅末端的#beta#-SiC(001)表面与Si(001)c(4x2)重建结构完全不同。这些理论预测为基于#beta#-SiC c(4x2)表面的STM测量提出的最近交替的上下二聚体模型(AUDD模型)带来了新的见解。

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