Asymmetry in the reorientation process of magnetization for crossing the 11-(bar)0 and the 110 directions in Ga_(1-x)Mn_xAs epilayers

摘要

The magnetization reversal processes of ferromagnetic Ga_(1-x)Mn_xAs films with different Mn concentrations have been investigated using the planar Hall effect. The field scan of the planar Hall resistance (PHR) showed an asymmetric behavior for the reorientation of magnetization crossing the [110] and the [110] directions. The magnetic anisotropy fields and the domain pinning field distributions of the films are obtained from the angle dependence of the PHR measurements. The magnetic anisotropy and pinning field distribution in the samples provided explanation for the observed asymmetric behavior in the magnetization reorientation process of Ga_(1-x)Mn_xAs film.