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Implementation of hydrogen passivation in an industrial low-cost multicrystalline silicon solar cell process

机译:工业低成本多晶硅太阳能电池工艺中氢钝化的实施

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The aim of this study was the incorporation of the microwave induced remote hydrogen plasma (MIRHP) passivation into a screen-printed solar cell process using different multicrystalline silicon base materials (BAYSIX (Bayer), Eurosil (Eurosolare), EMC (Sumitomo Sitix)). MIRHP before cell metallization including an antireflection coating (APCVD TiO/sub 2/ or PECVD SiN) as a capping layer to avoid the out-diffusion of hydrogen during contact firing as well as the MIRHP after cell metallization on uncoated cells have been investigated. As a reference, solar cells were processed without a MIRHP passivation. Using a PECVD SIN ARC on high quality material such as EUROSIL and BAYSIX an increase in the short circuit current density of 0.7 mAcm/sup -2/ and in the open circuit voltage of 3-4 mV have been observed by comparing cells with and without MIRHP. Using an APCVD TiO/sub 2/ ARC on solar cells based on EMC resulted in an increase in the short circuit current density of 0.7 mAcm/sup -2/ due to the MIRHP.
机译:本研究的目的是使用不同的多晶硅基础材料(Baysix(Bayer),Eurosil(Eurosolare),EMC(Sumitomo Sizix))将微波诱导的远程氢等离子体(mirhp)钝化钝化进入丝网印刷的太阳能电池过程中。 。细胞金属化之前的MirHP包括抗反射涂层(APCVD TiO / Sub 2 /或PECVD SiN)作为封盖层,以避免接触烧制期间氢气的出差以及在未涂覆细胞上的细胞金属化后的MirHP。作为参考,在没有mirhp钝化的情况下处理太阳能电池。在高质量材料上使用PECVD SIN弧,例如Eurosil和Baysix的短路电流密度增加0.7macm / sup -2 /并且在带有没有的细胞的情况下观察到3-4 mV的开路电压。 mirhp。在基于EMC的太阳能电池上使用APCVD TiO / Sub 2 /弧导致短路电流密度的短路电流密度增加0.7mmm / sup -2 /由于mirhp。

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