【24h】

PROCESSING AND OXIDATION BEHAVIOR OF Y_5Si_3

机译:Y_5SI_3的加工和氧化行为

获取原文

摘要

Improvement in the oxidation resistance of Ti-5Si_3 by the addition of carbon, boron or oxygen prompted a similar study of Y_5Si_3. Because of increased reactivity, several modifications in the processing of Y_5Si_3 were necessary to produce samples suitable for testing. This reactivity excluded the use of carbon as a dopant. Undoped Y_5Si_3 showed poor oxidation resistance above 700 deg C due to mechanical failure under stresses produced by growth of the oxidation product. The product consisted of an external layer of Y_2O_3 and an underlying layer rich in YSi_2. Y_5Si_3 doped with boron or oxygen showed no improvement in oxidation resistance. Lack of improvement is possibly due to a notably higher stability and faster growth rate of Y_2O_3 over SiO_2.
机译:通过添加碳,硼或氧气的Ti-5Si_3的抗氧化性的改善促使对Y_5SI_3的类似研究。由于反应性增加,需要在y_5si_3处理中进行几种修改以产生适合测试的样品。这种反应性排除了用碳作为掺杂剂的用途。由于通过氧化产物的生长产生的应力,未掺杂的Y_5SI_3由于机械破坏而显示出700℃以上的耐氧化性差。该产品由Y_2O_3的外层组成,富含YSI_2的底层。掺杂有硼或氧气的Y_5SI_3显示出抗氧化性的不良。缺乏改善可能是由于SIO_2上的稳定性较高和更快的生长速率。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号