Understanding implant damage by implant channeling profile measurements

摘要

This study qualitatively measures the damage created during ion implantation by monitoring the amount of channeling which occurs during a subsequent boron implant. The effects of implant dose, energy and beam current on damage generation are presented. In addition, the effects of implant species on damage creation is shown. These effects are qualitatively modeled using dechanneling calculations based on local damage densities. It is shown for the first time that IV recombination of the initial damage cascade generated by ion implantation occurs at temperatures as low as 400/spl deg/C and for times as short as 5 sec.