High-speed operation of a resonant tunneling flip-flop circuit employing a MOBILE (monostable-bistable transition logic element)

摘要

Resonant tunneling (RT) devices attract much attention because of their potential for high-speed operation as well as their high functionality, which leads to lower power dissipation. We have developed a highly functional logic gate, called MOBILE (monostable-bistable transition logic element), which exploits the negative differential resistance (NDR) of the RT phenomenon. In this paper, we demonstrate the high-speed operation-up to 18 Gb/s-of the MOBILE flip-flop (FF) circuit at room temperature. The present result indicates the promise of MOBILE-based FF circuits for high-speed digital applications.