Fully self-aligned tri-layer a-Si:H TFT with ultra-thin active layer

摘要

Summary form only given. To the best of our knowledge, the simple processing method described is the first fully self-aligned trilayer TFT with deposited n/sup +/ contacts. This process requires one less mask than our standard tri-layer process, with one additional unmasked backside exposure. In addition, these fully self-aligned TFTs have an ultra-thin a-Si:H layer that results in improved performance.