Fabrication of a GaAs MESFET using resistless processing and selective area epitaxy

摘要

We combine selective area epitaxy (SAE) and a newly discovered resist-less SRP technique to completely eliminate the use of photoresist during the definition of source, gate and drain. In this way the gate and channel regions are protected from exposure to resist and associated chemicals. Photoresist is only used to carry out contact enhancement after the fabrication of the device. This approach opens up the opportunity for in-situ fabrication of novel device structures through the use of various combinations of SAE and SRP. Here we show a MESFET as a demonstration of this technology.