All refractory light-sensitive josephson junctions

摘要

Procedures to fabricate all refractory light-sensitive tunnel junctions have been developed. A photoconducting cadmium sulphide film has been used as artificial barrier to modify its transparency during the experiments by a suitable optical input. Symmetrical Nb/Al-CdS (AlO_x)-Al/Nb and asymmetrical Nb/Al-CdS (AlO_x)/Nb junctions have been prepared. Samples with a barrier thickness up to 50 nm have been investigated. Preliminary measurements on light sensitive quasi particle and Cooper pair tunneling have been carried out.