Alternative insights in the microstructure of a-Si:H and nc-Si:H: a route to achieve solar cells with high stable efficiencies

摘要

In the last years we have proposed an alternative model to represent the microstructure of hydrogenated amorphous silicon (a-Si:H) network.In textbooks a-Si:H is represented as a continuous random network of Si-Si and Si-H bonds and the dominant defect is a coordination defect,the so-called dangling bond.