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Oxidation level changes in radiation sterilized ultra high molecular weight polyethylene medical implant material application

机译:放射灭菌超高分子量聚乙烯的氧化水平变化医用植入材料应用

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Summary form only received as follows: The objective of this study was to monitor the change in oxidation levels of radiation sterilized ultra high molecular weight polyethylene (UHMWPE) with time. Specimens of UHMWPE were packaged in air and sterilized at 2.5 megarads or 3.7 megarads using a commercial cycle. Control specimens from the same lot of material which were not sterilized were monitored over the same time period. Each sample was sectioned upon receipt to produce three 100 /spl mu/m thick specimens which were characterized using Fourier transform infrared (FTIR) microscopy. Spectra were collected at 100 /spl mu/m increments using a vernier stage and adjustable slit aperture. The initial surface oxidation levels were 300% greater than control samples for both radiation levels. After 12 months of storage, additional samples were prepared and examined. Samples irradiated at 3.7 megarads in air showed an additional 500% increase in surface oxidation which extended 200 /spl mu/m into the material. For the sample irradiated at 2.5 megarads a 300% additional increase in oxidation level was found on the surface but the oxidation level was only 170% greater at 200 /spl mu/m. These results suggest that radiation sterilized UHMWPE undergoes significant increases during storage. Oxidation of radiation sterilized UHMWPE implants may have a significant impact on the bearing properties of these materials.
机译:概要表格仅收到如下:本研究的目的是在时间监测辐射灭菌超高分子量聚乙烯(UHMWPE)的氧化水平的变化。 UHMWPE标本在空气中包装,并使用商业循环在2.5 Megarads或3.7 Megarads灭菌。在同一时间段内监测来自不灭菌的相同大量材料的控制样品。在接收后切割每个样品以产生三种100 / SPL mu / m厚的样本,其特征在于使用傅里叶变换红外(FTIR)显微镜。使用游标级和可调节的狭孔以100 / SPL MU / M增量收集光谱。初始表面氧化水平大于辐射水平的对照样品的300%。在储存12个月后,制备并检查另外的样品。在空气中照射3.7 Megarad辐射的样品表明,表面氧化的额外500%升高,该表面氧化延伸到材料中。对于在2.5米加拉德照射的样品,在表面上发现了300%的氧化水平额外增加,但氧化水平在200 / SPL mu / m时仅为170%。这些结果表明,辐射灭菌的UHMWPE在储存期间经历显着增加。辐射灭菌的UHMWPE植入物的氧化可能对这些材料的轴承性能产生显着影响。

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