Resonant photorefractive effect at near infrared in InGaAs-GaAs multiple quantum well structure

摘要

We investigate InGaAs-GaAs MQW structure. It has a resonant transition at near 1 /spl mu/m, which is a spectral region that is especially useful for biomedical measurements. Since the resonance is a little less than the band gap energy of GaAs substrate, we do not have to remove the substrate, which significantly simplifies the fabrication process.