Limits of Writing Multivalued Resistances in Passive Nanoelectronic Crossbars Used in Neuromorphic Circuits

摘要

In this paper, limits of writing multivalued resistances in passive nanoeleetronic crossbars are examined. The results are based on circuit simulation including device models for resistive switches based on the electrochemical metallization effect. The write operation is performed using a current mirror based on 40nm CMOS technology which operates in subthreshold mode. The results show that only sparsely coded pattern with low mutual overlap can be robustly brought into the matrix which limits the use of passive crossbar to applications that feature particular spatial distributions of resistive weights.