Smart detectors: devices integration circuits and systems

摘要

The fabrication and performance of thin film p-i-n and metal-semiconductor-metal (MSM) photodetectors and the integration of these detectors onto silicon circuitry is presented. The thin film photodetectors are separated from the growth substrate using epitaxial lift off or total substrate removal, and are subsequently bonded to silicon circuits. Performance of the thin film photodetectors is comparable to on-wafer counterparts, and in the cases of resonant cavity p-i-ns and inverted (fingers on the bottom) MSMs, the performance is enhanced through the removal of the substrate. Receiver circuits have been designed, integrated with thin film photodetectors, and tested. Finally, smart pixel arrays of photodetectors have been integrated directly on top of an array of silicon oscillator circuits to demonstrate three dimensionally interconnected image processing systems.