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Microwave measurement of energy gap and penetration depth of MgB_2 thin film

机译:MGB_2薄膜的能隙和渗透深度的微波测量

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Using a dielectric resonator technique the magnetic field penetration depth Δ and the energy gap A of two MgB_2 thin films were determined by measuring changes of resonance frequency with temperature. The exponential temperature dependence of λ is revealed at low temperatures (T < T_c/4, T_c is the critical temperature of the thin film). It indicates that a finite energy gap exists for thermal excitation of quasiparticles. From our measurements values of Δ/kT_c = 1.25 and λ_0 = 290 nm for sample A and Δ/kT_c = 1.20 and λ_0 = 160 nm for sample B give the best fit to the experimental results. The corresponding values for the energy gap Δ are 3.4 meV for sample A and 3.8 meV for sample B. In the high temperature region (T > T_c/2) the temperature dependence of λ can be well fitted by λ_0/[1-(T/T_c)~2]~(1/2). Our results strongly support the absence of nodes in the gap and a possible multigap scenario.
机译:使用介质谐振器技术,通过测量温度的谐振频率的变化来确定两个MGB_2薄膜的磁场穿透深度δ和能量间隙A。 λ的指数温度依赖性在低温下显示(T T_C / 2)中,λ的温度依赖性通过λ_0/ [1-(t / t_c)〜2]〜(1/2)。我们的结果强烈支持差距中的节点和可能的多粒情景。

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