Electrical transport properties of Bi2223 001 tilt grain boundary junctions

摘要

This work deals with experiments on the electrical transport of epitaxial Bi_2Sr_2Ca_2Cu_3O_x (Bi2223) thin films fabricated by pulsed laser deposition on (100) oriented SrTiO_3 single crystal and bicrystalline substrates with [001] tilt grain boundaries. The current-voltage characteristics and the temperature dependence of the critical current density J_c(T) across grain boundaries of thin film Bi2223 bicrystals have been measured as a function of tilt angle (Θ). For Θ= 0-36.8°, the critical current density decreases exponentially with increasing tilt angle. This orientation dependence is very similar to that observed for YBa_2Cu_3O_7 bicrystals.