High-power highly reliable operation (40 mW at 60/spl deg/C) of compressively strained quantum-well 680-nm AlGaInP LDs

摘要

Optimized thin quantum-well (QW) structures under compressive strain are examined for high-power characteristics suitable for light sources of optical disk systems. As a result, compressively strained triple-quantum-well LDs can operate stably at 40 mW and a high temperature of 60/spl deg/C for over 1000 hours.