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Thin film solar cells

机译:薄膜太阳能电池

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Within a comparatively short time the research on thin film solar cells has led to photovoltaic conversion efficiencies exceeding 16% which makes this technology a viable candidate for widespread applications. The contribution focusses on major issues of the design and implementation of cells based on Cu-III-Vi$-2$/ chalcopyrite absorber thin films. The flexibility of this system leads to a large degree of freedom for the preparation as well as the electronic structure of the cell. Characterization of films and cells is not straightforward and there are still several important aspects that are not yet fully understood. Nevertheless, useful models have been derived for growth mechanisms, surface properties, interface formation, recombination paths and photo current collection using a combination of several independent characterization methods and numerical simulations. The substrate and back contact as well as secondary phases, mainly binary copper chalcogenides and copper poor ternaries, are having a significant influence. Different compounds have been investigated for the buffer layer between absorber and TCO (transparent conductive oxide) front contact. The highest efficiencies have been obtained with absorber band gaps less than 1.4 eV using a (very thin) CdS buffer and a ZnO TCO. The performance of various thin film solar cells will be briefly summarized.
机译:在一个相对短的时间内,薄膜太阳能电池的研究导致光伏转换效率超过16%,这使得这项技术成为广泛应用的可行候选者。该贡献集中在基于Cu-III-VI $ -2 $ / Chalcopyrite吸收器薄膜的细胞设计和实施的主要问题。该系统的灵活性导致准备的大量自由度以及电池的电子结构。薄膜和细胞的表征并不直接,并且仍然存在几个重要方面,尚不完全理解。然而,使用几种独立表征方法和数值模拟的组合,已经为生长机制,表面性质,界面形成,重组路径和光电流收集来得出有用的模型。基材和背面接触以及二次相,主要是二元铜硫芥子生成剂和铜差的三龙症具有显着影响。已经研究了不同的化合物,用于吸收剂和TCO(透明导电氧化物)前触头之间的缓冲层。使用(非常薄的)Cds缓冲液和ZnO TCO的吸收带间隙,吸收带间隙的吸收带间隙具有最高效率。将简要概括各种薄膜太阳能电池的性能。

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