Photoelectrochemical etching of n-InP producing antireflecting structures for solar cells

摘要

Photoelectrochemical (PEC) etching of n-InP is studied as a method to engrave relief microstructures. Experiments of PEC were performed with holographic exposures ($lambda $EQ 0.4579 $mu@m) and homogeneous white light on n-InP. The triangular profile characteristic of holographic patterns recorded parallel to the $LS@011$GRT direction appeared even when the sample was etched using homogeneous white light. In this case deep random microstructures were obtained that present interesting anti-reflecting properties that may be useful in solar cells applications.