450 V 30 A bipolar power transistor with two levels of metallisation

摘要

A 450 V 30 A n-p-n transistor dedicated to a DC contactor breaker is presented. At a forced gain of 10, it features a voltage drop of 0.5 V at 30 A. The turn off capability is 50 A under 800 V (V/sub CB0/) by using a dedicated drive. A two-layer metallisation has been developed in order to achieve this device. The structure has a fine emitter pitch. A fully brazed packaging is used to improve the surge behaviour and to decrease the stray inductance.