The authors considered the analysis of the electrical characteristics of the vertical insulated base transistor (IBT), a power MOS-bipolar structure that is not punished from latchup. The device breakdown voltage and the output characteristics are the main aspects discussed in this work. The basic IBT structure shows a higher current capability and a lower breakdown voltage than the VDMOS. To avoid this breakdown voltage decrease, two modified IBT structures are presented. All these types of IBTs have been fabricated with different edge termination techniques to compare their electrical performances. The IBT with interconnected p-wells shows better performances than the IBT with shunt resistor. Moreover, their electrical characteristics have also been compared experimentally with that of VDMOS and the IGBT.
展开▼
