The effect of recombination centers on the lifetime dependence upon temperature and injection level

摘要

The effect of the energy levels of the recombination centers from lifetime dependence versus temperature at both low and high injection levels is pointed-out, for the case of single and multiple recombination levels in Si. The temperature dependence of lifetime allows one to evaluate the energy levels of the recombination centers by using a differential a.c. measurement technique. This technique has been used for a thick, low doped layer to detect the recombination centers present in 'good' quality materials. The results show that the recombination centers in these materials are relatively shallow.