Persistent spectral hole burning (PSHB) was performed for several porphyrin molecules imbedded in polymer hosts and rare-earth ion Sm$+2$PLU$/ doped in BaFCl$-0.5$/Br$- 0.5$/ matrix. Power saturation and broadening effects for hole depth and width were observed. The dynamical process of hole formation was measured and explanation by population rate equations was given. Quantum efficiency of photochemical hole burning was investigated. For BaFCl$-0.5$/Br$-0.5$/:Sm$+2$PLU$/ the capacity of data storage was estimated according to the result of multiple hole burning.
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