Comparison of IGBTs and HF-GTOs with respect to high frequency inverter applications

摘要

IGBTs and high-frequency (HF) GTO thyristors are investigated for applications in fast switching PWM inverters. Device ratings are 1200 V/300 A and 1000 V/300 A for the IGBTs and 1600 V/600 A for the HF-GTOs. Subjects of the comparison are the gate-drive requirements, conduction and switching losses, switching speed, and overload capability.