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Role of Mn Doping on the Electromechanical Properties of 001 Domain Engineered Single crystals

机译:Mn掺杂对域设计的单晶机电性能的作用

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We studied the influence of Mn doping on electromechanical properties of PZN-xPT with x = 7% and 9%. Single crystals oriented along the [111], [011] and [001] directions were poled by a "field cooling" process with an applied electric field of 1 kV/cm. It is shown that Mn doping has a significant influence on the single domain crystals in both cases. It modifies the phase symmetry of single domain PZN-7PT from orthorhombic to rhombohedral. It reduces permittivity perpendicular to polarization direction of single domain PZN-9PT by about 40%. This change in the properties of the bulk material is the main cause for the decrease of permittivity observed in [001] poled PZN-9PT crystals. Further effects of doping on the properties of [001] domain engineered crystals are a decrease of the piezoelectric coefficient, a hardening of the material and an increase of the mechanical quality factor.
机译:我们研究了Mn掺杂对PZN-XPT的机电性能的影响,X = 7%和9%。沿着[111],[011]和[001]方向定向的单个晶体通过“励磁冷却”工艺抛光,其中施加的电场为1kV / cm。结果表明,Mn掺杂对两种情况下的单结构域晶体具有显着影响。它改变从正晶骨rhombohehral的单结构域pzn-7pt的相位对称性。它将垂直于单结构域PZN-9PT的偏振方向的介电常数降低约40%。散装材料的性质的这种变化是在恒杆PZN-9PT晶体中观察到的介电常数降低的主要原因。掺杂对域设计晶体的性质的进一步效果是压电系数的降低,材料的硬化和机械质量因子的增加。

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