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Sample Thickness Dependence of Electromechanical Properties of PZN-PT and PMN-PT Single Crystals

机译:PZN-PT和PMN-PT单晶机电性能的样品厚度依赖性

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We studied the electromechanical properties of PMN-PT and PZN-PT single crystal plates poled along [001] with thickness t ranging from 800 down to 70 μm. In the case of the tetragonal single domain state (1T), the properties of the thickness mode remain stable down to 250 μm. Below 250 μm, an instability of the polarization is shown. The plates exhibit regions where polarization lies in the plane of the plates. The emergence of these regions results in an additional shear mode at a frequency close to that of the thickness mode, an important increase of the dielectric constants (ε{sup}S){sub}33 and (ε{sup}T){sub}33 and a decrease of the coupling-factor k{sub}t and longitudinal wave velocity (v{sup}D){sub}(33t). In the rhombohedral multidomain state (4R) a moderate variation of k{sub}t can be observed while (ε{sup}S){sub}33 increases with decreasing thickness. The increase of the dielectric constant in the 4R state is also related to an additional shear mode. When t decreases, the volume ratios of each domain family are not equal, leading to a tilt of the average spontaneous polarization away from the poling electric field. Consequently the modification of the domain structure for thin plates leads to a change of the electromechanical properties.
机译:我们研究了PMN-PT和PMN-PT单晶板的机电性能,沿[001],厚度t范围为800至70μm。在四边形单域状态(1T)的情况下,厚度模式的性质保持稳定至250μm。低于250μm,显示了极化的不稳定性。板表现出偏振位于板的平面中的区域。这些区域的出现导致靠近厚度模式的频率的额外剪切模式,介电常数的重要增加(ε{sup} s){sub} 33和(ε{sup} t){sub } 33和耦合因子k {sub} t和纵向波速度的减少(v {sup} d){sub}(33t)。在rhombohedral多麦片状态(4r)中,可以观察到k {sub} t的中等变化,而(ε{sup} s){sub} 33随着厚度的降低而增加。 4R状态中的介电常数的增加也与附加的剪切模式有关。当T降低时,每个结构域系列的体积比不等于,导致从极化电场的平均自发极化倾斜。因此,薄板的畴结构的改变导致机电性能的变化。

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