Advanced single poly BiCMOS technology for high performance programmable TTL/ECL applications

摘要

An optimized process has been developed by integration of several high-performance device modules such as PtSi Schottky barrier diodes, lateral p-n-p transistors, and electrically programmable fuse elements into the 0.6- mu m L/sub eff/ high-performance advanced BiCMOS (ABiC IV) process. Due to unique device/process requirements for each module, a process flow has been designed to completely decouple the individual modules from each other to prevent process marginalities and tradeoffs. This technology is especially attractive for high-performance and high-density BiCMOS TTL/ECL (transistor transistor logic/emitter coupled logic) applications requiring electrically programmable fuse elements.