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Hollow Stems for Higher Micromechanical Disk Resonator Quality Factor

机译:空心阀杆用于更高的微机械盘谐振器质量因子

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The use of hollow support stems to reduce energy loss to the substrate while supporting all-polysilicon UHF micromechanical disk resonators has enabled quality factors as high as 56,061 at 329 MHz and 93,231 at 178 MHz--values now in the same range as previous disk resonators employing multiple materials with more complex fabrication processes. With a substantially smaller cross-sectional area compared with the full stems used by predecessors, the hollow stem of this work effectively squeezes the energy conduit between the disk structure and the substrate, thereby suppressing energy loss and maximizing Q for devices operating in radial-contour and whispering gallery modes. Measurements confirm Q enhancements of 2.6× for contour modes at 154 MHz and 2.9× for wine glass modes around 112 MHz over values previously achieved by full stem all-polysilicon disk resonators with identical dimensions. The measured results not only demonstrate an effective Q-enhancement method with minimal increase in fabrication complexity, but also provide insights into anchor loss mechanisms that have been largely responsible for limiting the Q's attainable by all-polysilicon capacitively-transduced MEMS resonators.
机译:使用中空支撑杆以减少基板的能量损失,同时支撑全多晶硅UHF微机械盘谐振器,在329MHz的329 MHz和93,231处具有高达56,061的质量因素,现在与之前的磁盘谐振器相同的范围。采用多种材料,具有更复杂的制造过程。与前辈使用的全杆相比具有基本较小的横截面区域,该工作的中空杆有效地挤压盘结构和基板之间的能量导管,从而抑制在径向轮廓中操作的装置的能量损失和最大化Q和耳语的画廊模式。测量确认Q Q增强时间为154 MHz的轮廓模式和2.9×用于葡萄酒玻璃模式的2.9×以前通过全阀杆全多晶硅磁盘谐振器具有相同尺寸的完全实现的值。测量结果不仅证明了一种有效的Q增强方法,该方法的制造复杂性的增加最小,而且还提供了在很大程度上负责限制所有多晶硅的Q可实现的Q的锚损损伤机制的见解。

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