Design, fabrication, and testing of a novel planar Schottky barrier diode for millimeter and submillimeter wavelengths

摘要

A whiskerless diode has been developed for operation at 100 GHz. It uses an etched surface channel to minimize parasitic capacitance and simplify fabrication. The diode is mechanically rugged and suitable for high-vibration and cryogenic operation. DC I-V characteristics are comparable to the highest-quality whisker-contacted devices. An overview of device design, performance, and fabrication is presented.