Much has appeared in the literature on the sources of flicker noise, or 1/f noise, in MOSFETs.1,2,3 This is often [he dominant noise when MOSFETs are used to design sensitive amplifiers. However, there is very little agreement on the physical mechanisms responsible for this noise, and there are no widely accepted quantitative models for it. Of the theories, most widely held is the carrier density fluctuation model, which accounts for the noise being produced by random trapping and de-trapping of the carriers in the inversion layer by traps in the gate oxide. There is another empirically based hypothesis, the mobility fluctuation model, whose foundation lies in the observation of flicker noise in bulk resistors, that has also been suggested to account for the noise mechanism.2
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