Y-Function Based Methodology for Accurate Statistical Extraction of HEMT Device Parameters for GaN Technology

摘要

We develop a new protocol based on Y-function for accurate statistical extraction of electrical parameters of High Electron Mobility Transistor (HEMT) devices for GaN technology. Relevant electrical parameters such as oxide capacitance, threshold voltage, effective mobilities and access resistance are extracted. This protocol has been verified over a large range of channel lengths for two normally-off device HEMT GaN wafers having different levels of access resistances.