We report the fabrication of periodic one- and two-dimensional nanostructures on semiconductorsurfaces utilizing in-situ single-pulse direct laser interference patterning during molecular beam epitaxialgrowth. A Nd:YAG laser operating at 355 nm wavelength with a pulse duration of 7 ns is usedto produce periodic gratings or nanoislands with a submicron periodicity on the growing InAs/GaAssurfaces. By means of four-beam interference patterning, ordered square arrays of quantum dots witha lattice pitch of 200-300 nm are obtained. This in-situ technique offers a new way to control quantumdot nucleation sites and it constitutes a technological advance to realize periodic Ⅲ-Ⅴ semiconductornanostructures with impact in optoelectronics and quantum information processing.
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