A Temperature-dependent PSpice Short-circuit Model of SiC MOSFET

摘要

A temperature-dependent PSpice short-circuit model of silicon carbide metal-oxide semiconductor field effect transistor (SiC MOSFET) is proposed in this paper, which can be used to study the short-circuit characteristic of SiC MOSFET by simulation. Based on the non-segmented model, the normal working model of SiC MOSFET is established first. The correctness of the normal working model is verified by comparing the simulation results with the characteristic curves in the SiC MOSFET's datasheet. Then the thermal network model of case-to-junction is introduced to describe the changes of junction temperature during short-circuit condition, and the short-circuit current of SiC MOSFET is further fitted based on the junction temperature. Finally, the proposed temperature-dependent short-circuit model of SiC MOSFET is simulated in PSpice, and the simulation results show the effectiveness of the proposed model, which can work correctly under normal working condition and short-circuit condition. Furthermore, the correctness of the proposed short-circuit model is verified by comparing the simulation results with the experimental results provided in the literature. Therefore, the proposed model in this paper make it possible that designing and analyzing the SiC MOSFET short-circuit characteristics in simulation.