High-frequency Response of Si-SET: Experimental Verification

摘要

It has been observed that there is no upper limit offrequency in the rectifying operation ofsingle-electron transistors (SETs). Theoreticalexplanation behind this is that the asymmetry inthe tunneling rate with respect to drain voltage isresponsible for asymmetry in the drain current,resulting in rectification even at higher frequencybeyond the conventional cutoff frequency. Here,the details of ongoing experimental verification arereported.Devices under consideration are i) SET by PADOXmethod (Fig. 1), and ii) heavily doped Sinanowire-base SET (Fig. 2). In addition, referenceSchottky barrier diode is used to calibrate themeasurement system. Frequency response of SETplaced inside the low-temperature (LT) chamber ismeasured by applying high-frequency signal fromAgilent N5181A signal generator (100 kHz ~ 3GHz) to the drain terminal via GSG probe and 6dBattenuator for providing DC return path (Fig. 3).