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A Reflection Type Phase Shifter for Reconfigurable Reflectarrays at 240 GHz

机译:240 GHz中可重构反射阵列的反射型移相器

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摘要

In this work, a high frequency reflection-type phase shifter implemented in 0.13 μm SiGe HBT technology is presented. It is based on a single-pole single-throw switch topology, utilizing HBTs in reverse-saturation. The phase shifter achieves a return loss of -2.8/-2.5 dB for a phase control of 90.4° at 240 GHz, respectively. The power consumption is 6.8 mW during the ON state. The phase-shifter test structure was fabricated and the measured results show a good agreement with the simulations.
机译:在这项工作中,提出了一种在0.13μmSiGeHBT技术中实现的高频反射型移相器。它基于单极单掷开关拓扑,利用反向饱和的HBT。相移器分别实现-2.8 / -2.5dB的返回损耗,分别在240GHz处的相位控制为90.4°。在ON状态下功耗为6.8兆瓦。制造相移器测试结构,测量结果与模拟良好。

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