A Non-Reflective T/R Switch with Leakage Cancellation Technique for 5G mm Wave Application

摘要

In this paper, a transmitter/receiver (T/R) single-pole double-throw (SPDT) switch is designed with a new leakage cancellation topology for high T/R isolation within 24.25~29.5 GHz and fabricated with the 0.15 µm GaAs pHEMT technology. The proposed leakage cancellation structure consists of two pHMETs and a series 50Ω resistor sandwiched by two 90° phase shifters. It provides wideband isolation and non-reflective characteristic at the isolated port. The measured insertion loss is smaller than 1.37 dB and the isolation is higher than 26.7 dB, within the whole 24.25~29.5 GHz band for 5G millimeter-wave application. The minimum insertion loss and the maximum T/R isolation are achieved as 1.07 dB and 47 dB respectively both at 24.3 GHz. The chip core occupies the area of 0.45x0.56 mm^2.