A High-Gain SiGe BiCMOS LNA for 5G In-Band Full-Duplex Applications

摘要

This paper presents a low noise amplifier (LNA) implemented in a SiGe BiCMOS technology for 5G applications. The LNA is based on a two-stage cascode amplifier topology with a differential input and single-ended output. The design of the first stage is pseudo-differential. The first stage is based on simultaneous noise and power matching technique. At the input, a balun for single-ended to differential-output conversion is located to enable single-ended measurements. The LNA achieves 25.3 dB of peak gain while dissipating 66 mW of power in small-signal operation. The input-referred 1 dB compression point and noise figure are -10 dBm and 2 dB measured at 25 GHz, respectively. This work achieves the highest FoM among the compared works attributed to the design of the two-stage cascode topology. The LNA occupies 1.35 mm^{2 including pads.}