The Effects of the Substrate Doping Concentrations on 6H-SiC Nano-Scale ggNMOS ESD Protection Device

摘要

With the continuous miniaturization of device size, integrated circuits (IC) are becoming more vulnerable to electrostatic discharge (ESD) induced failures. To improve the reliability and robustness of the ICs, ESD protection devices should be used at each I/O pin. In this paper, the effects of the substrate doping concentrations of 6H-silicon carbide-based nano-scale grounded-gate NMOS (ggNMOS) ESD protection device on the snapback behavior has been investigated. The substrate doping concentration is one of the most important design parameters in designing a robust ESD protection device. By utilizing the near punch through effect, the ESD protection characteristics can be improved. We found that the trigger and hold voltages of the snapback curves had increased by increasing the substrate doping concentrations of ggNMOS. The results show that comparatively higher doping concentration can be used to achieve higher trigger and hold voltages which can be used for 5 V applications. All the simulations are carried out using Silvaco ATLAS device simulator.