IEEE recommended practice for powering and grounding electronic equipment. (Color Book Series - Emerald Book)

摘要

This paper presents a design procedure for MOS amplifiers based ona universal model of the MOSFET, valid from weak to strong inversion. Aset of very simple expressions allows quick design by hand as well as anevaluation of the design in terms of power consumption and silicon realestate. It is shown that in most cases there is an optimum bias inmoderate inversion for which the attainable DC gain is maximum. Thedesign and measurements on a common-source amplifier illustrate theappropriateness of the proposed methodology