IEEE recommended practice for powering and grounding electronic equipment. (Color Book Series - Emerald Book)

摘要

This paper presents a new compact model for the intrinsic chargesand (trans) capacitances of the MOSFET including short-channel effectssuch as drain induced barrier lowering (DIBL), channel length modulation(CLM) and carrier velocity saturation. Explicit and compact expressionsfor charges and (trans) capacitances valid in all regimes of operationare presented. Simulations examples that illustrate short-channeleffects in charges and (trans) capacitances are shown