Compact, high-temperature, single-level power modules for 10 to 25 kV DC link voltages using silicon carbide power electronics

摘要

Power modules designed explicitly for silicon carbide (SiC), single level power converters between 10 and 24 kV are presented. Using silicon power electronics, multi-level converters are required to reach multiple kV DC link voltages. Multi-level converters require more complex topologies and a larger number of switches, diodes, and/or capacitors. Due to the very high blocking voltages of SiC, it is now possible to build single level converters up to 24 kV. Single level SiC converters have the potential of dramatic cost savings over multi-level silicon-based converters as the device costs of SiC are reduced. Two modules are presented here designed for 15 kV/ 120 A and 24 kV / 30 A. These modules are designed to be compact, while meeting all creepage and clearance standards for their voltage ratings, operate at 200 °C, have a very low inductance, and fast switching speed.