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Theory of transit-time resonance in ballistic n+-i-n+ diodes. The diode response in THz frequency range

机译：弹道n + -i-n +二极管中的渡越时间共振理论。太赫兹频率范围内的二极管响应

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We investigated the current-voltage characteristics and impedance of the ballistic n+-i-n+ diode made by InAs in THz frequency range. We found the optimal diode parameters and the electrical conditions to amplify and generate THz radiation.

机译：我们调查了通过在THz频率范围内通过INA制造的弹道N ^{+ -i-n ^{+ 二极管的电流 - 电压特性和阻抗。我们发现最佳二极管参数和电气条件以放大和产生THz辐射。}}

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《Advanced Optoelectronics and Lasers, 2008 International Conference on 》||P.261-263|共3页
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Korotyeyev V. V.; Kochelap V.A.; Klimov A. A.;
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中图分类工业技术 ;
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Terahertz generation; ballistic transport; negative dynamic impedance;

机译：太赫兹产生弹道负动态阻抗;

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专利

1. Theory of Ballistic Electron Transport in n~+ - i - n~+ Diodes. Negative Dynamic Resistance in THz-Frequency Range [J] . V. V. Korotyeyev, V. A. Kochelap, A. A. Klimov, Journal of Nanoelectronics and Optoelectronics . 2011 ,第2期

机译：n〜+-i-n〜+二极管中的弹道电子传输理论。太赫兹频率范围内的负动态电阻
2. Theory of unipolar ballistic and quasiballistic transit-time oscillators for a terahertz range [J] . Gribnikov ZS., Vagidov NZ., Mitin VV., Physica, E. Low-dimensional systems & nanostructures . 2003 ,第1a2期

机译：太赫兹范围的单极弹道和准弹道传播时间振荡器的理论
3. Frequency Increase of Resonant Tunneling Diode Oscillators in Sub-THz and THz Range Using Thick Spacer Layers [J] . Naomichi Kishimoto, Safumi Suzuki, Atsushi Teranishi, Applied physics express . 2008 ,第4期

机译：使用厚间隔层在亚太赫兹和太赫兹范围内增加谐振隧穿二极管振荡器的频率
4. Theory of transit-time resonance in ballistic n+-i-n+ diodes. The diode response in THz frequency range [C] . Korotyeyev V. V., Kochelap V.A., Klimov A. A. International Conference on Advanced Optoelectronics and Lasers . 2008

机译：弹道N + -i-N +二极管中的传输时间共振理论。 THz频率范围内的二极管响应
5. Lateral variation in the Schottky barrier height and ballistic electron transport characteristics of gold/(100)gallium arsenide and gold/platinum silicide/(100)silicon diodes. [D] . Talin, Albert Alec. 1995

机译：金/（100）砷化镓和金/硅化铂/（100）硅二极管的肖特基势垒高度和弹道电子传输特性的横向变化。
6. Wide temperature range studies of the low frequency THz spectrum of benzoic acid using FTIR spectroscopy [O] . Lucia M. Lepodise 2020

机译：使用FTIR光谱法测定苯甲酸低频THz谱的宽温度范围研究
7. Semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor strucutres: relevance of Pauli and long range Coulomb correlations [O] . Gomila, G., Cantalapiedra, I. R., Gonzalez, T., 2002

机译：弹道n + -i-n +半导体中散粒噪声的半经典理论结构：泡利的相关性和远距离库仑相关性
8. Suppression of the Transit-Time Instability in Large-Area Electron Beam Diodes. [R] . Myers, M. C., Friedman, M., Swanekamp, S. B., 2002

机译：抑制大面积电子束二极管中的传输时间不稳定性。

Theory of transit-time resonance in ballistic n+-i-n+ diodes. The diode response in THz frequency range

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