首页> 外文会议>Integrated Reliability Workshop Final Report, 2002. IEEE International >Infrared Optical Beam Induced Resistance Change (IROBIRCH) technology for IC failure localization and analysis
【24h】

Infrared Optical Beam Induced Resistance Change (IROBIRCH) technology for IC failure localization and analysis

机译:用于IC故障定位和分析的红外光束感应电阻变化(IROBIRCH)技术

获取原文

摘要

The Infrared Optical Beam Induced Resistance Change (IROBIRCH) is a new technique in reliability testing and failure analysis. This paper describes the theory and application of the IROBIRCH system. One of applications we performed is how to isolate areas of high and low resistance at a capacitor array area on a CMOS10 chip. The results and root cause analysis are detailed step by step.
机译:红外光束感应电阻变化(IROBIRCH)是一种用于可靠性测试和故障分析的新技术。本文介绍了IROBIRCH系统的理论和应用。我们执行的应用之一是如何隔离CMOS10芯片上电容器阵列区域的高阻区域和低阻区域。结果和根本原因分析将逐步详细介绍。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号