Transistors and tunnel diodes for analog/mixed-signal circuits andembedded memory

摘要

An integrated tunnel diode/transistor process can be used toincrease the speed of signal processing circuitry or reduce power at thesame speed; in memory applications, tunnel diodes can be used to reducestatic power dissipation (>20X in Si, >1000X in III-V materials)relative to conventional approaches. This paper summarizes recentprogress in InP and Si-based tunnel diodes and circuits