Broadly-tunable narrow-linewidth micromachined laser/photodetectorand phototransistor

摘要

The key limitation to dense wavelength division multiplexing (WDM)systems is the receiving end since laser linewidths are typically lessthan 1 Å. By reverse biasing the p-i-n diode region, wedemonstrated dual functionality of wavelength-tunable vertical-cavitysurface-emitting lasers (VCSELs) as wavelength-tunable resonant cavityphotodetectors (RCPs) with linewidths less than 2.5 nm. Additionally, wehave fabricated wavelength-tunable resonant cavity phototransistors(RCPTs) with linewidths as narrow as 1.7 nm. Wavelength-tunable RCPTsare capable of high quantum efficiency, narrow linewidth, and high-speedoperation, making them ideal devices for WDM receivers