Cell technology directions for advanced MPUs and othermemory-embedded logic devices

摘要

In this paper, a guideline for optimum embedded memory structuresfor advanced MPUs and other memory-embedded logic devices is proposed.It is concluded that introduction of full CMOS cells is inevitable forfuture SRAMs operated under reduced power supply voltage conditions.Therefore, MPUs will continue to use full CMOS cells maintainingexcellent process and transistor design compatibility with SRAMs. On theother hand, some advanced logic devices will use DRAM cells, since theyrequire higher density rather than higher performance or better processcompatibility